STF18N60M2 datasheet(1/13 Pages) STMICROELECTRONICS

Teilenummer	STF18N60M2

Bauteilbeschribung	Low gate input resistance

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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This is information on a product in full production.

February 2014

DocID024729 Rev 3

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13

STF18N60M2

N-channel 600 V, 0.255

Ω typ., 13 A MDmesh II Plus™ low Q

g

Power MOSFET in a TO-220FP package

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

• LLC converters, resonant converters

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q

g

. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

AM15572v1

TO-220FP

1

2

3

Order code

VDS @ TJmax RDS(on) max

ID

STF18N60M2

650 V

0.28

Ω

13 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STF18N60M2

18N60M2

TO-220FP

Tube

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