STD35N3LH5 datasheet(3/15 Pages) STMICROELECTRONICS

Teilenummer	STD35N3LH5

Bauteilbeschribung	Low gate drive power losses

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STD35N3LH5

Electrical ratings

Doc ID 16359 Rev 2

3/15

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS=0)

30

V

VGS

Gate-source voltage

± 20

V

ID

(1)

1.

The value is rated according Rthj-c

Drain current (continuous) at TC = 25 °C

35

A

ID

Drain current (continuous) at TC = 100 °C

22

A

IDM

(2)

2.

Pulse is rated according safe operating area

Drain current (pulsed)

140

A

PTOT

Total dissipation at TC = 25 °C

35

W

Tj

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

4.3

°C/W

Rthj-pcb

(1)

1.

When mounted on 1inch² FR-4 2Oz Cu board

Thermal resistance junction-ambient max

50

°C/W

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAV

Not-repetitive avalanche current

14

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAV, VDD = 24 V)

100

mJ

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