STH12N120K5-2, STP12N120K5,

STW12N120K5, STWA12N120K5

Electrical characteristics

DocID022133 Rev 4

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Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 20: "Unclamped

inductive load test circuit")

-

23

-

ns

Rise time

-

11

-

ns

Turn-off delay time

-

68.5

-

ns

Fall time

-

18.5

-

ns

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

12

A

Source-drain current

(pulsed)

-

48

A

VSD

(1)

Forward on voltage

-

1.5

V

Reverse recovery

time

di/dt = 100 A/µs,

(see Figure 19: "Test circuit

for inductive load switching

and diode recovery times")

-

630

ns

Reverse recovery

charge

-

12.6

µC

Reverse recovery

current

-

40

A

Reverse recovery

time

di/dt = 100 A/µs,

Tj = 150 °C

(see Figure 19: "Test circuit

for inductive load switching

and diode recovery times")

-

892

ns

Reverse recovery

charge

-

15.6

µC

Reverse recovery

current

-

35

A

Notes:

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Gate-source

breakdown voltage

30

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the

ESD capability of the device. The Zener voltage is appropriate for efficient and cost-

effective intervention to protect the device integrity. These integrated Zener diodes thus

eliminate the need for external components.