STD25P03LT4G datasheet(2/8 Pages) ONSEMI

Teilenummer	STD25P03LT4G

Bauteilbeschribung	Power MOSFET

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Hersteller	ONSEMI [ON Semiconductor]

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NTD25P03L, STD25P03L

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = −250 mA)

Temperature Coefficient (Positive)

V(BR)DSS

−30

−24

V

mV/

°C

Zero Gate Voltage Drain Current

(VDS = −30 Vdc, VGS = 0 Vdc, TJ = 25°C)

(VDS = −30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−1.0

−100

mA

Gate−Body Leakage Current

(VGS = ±15 Vdc, VDS = 0 Vdc)

IGSS

−100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = −250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

−1.0

−1.6

4.0

−2.0

V

mV/

°C

Static Drain−to−Source On−State Resistance

(VGS = −5.0 Vdc, ID = −12.5 Adc)

(VGS = −5.0 Vdc, ID = −25 Adc)

(VGS = −4.0 Vdc, ID = −10 Adc)

RDS(on)

0.051

0.056

0.065

0.072

0.080

0.090

W

Forward Transconductance

(VDS = −8.0 Vdc, ID = −12.5 Adc)

gFS

13

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = −25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

900

1260

pF

Output Capacitance

Coss

290

410

Reverse Transfer Capacitance

Crss

105

210

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time

(VDD = −15 Vdc, ID = −25 A,

VGS = −5.0 V,

RG = 1.3 W)

td(on)

9.0

20

ns

Rise Time

tr

37

75

Turn−Off Delay Time

td(off)

15

30

Fall Time

tf

16

55

Gate Charge

(VDS = −24 Vdc,

VGS = −5.0 Vdc,

ID = −25 A)

QT

15

20

nC

Q1

3.0

Q2

9.0

Q3

7.0

BODY−DRAIN DIODE RATINGS (Note 3)

Diode Forward On−Voltage

(IS = −25 Adc, VGS = 0 V)

(IS = −25 Adc, VGS = 0 V, TJ = 125°C)

VSD

−1.0

−0.9

−1.5

V

Reverse Recovery Time

(IS = −25 A, VGS = 0 V,

dIS/dt = 100 A/ms)

trr

35

ns

ta

20

tb

14

Reverse Recovery Stored Charge

QRR

0.035

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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