Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7356DP Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI7356DP Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7356DP Vishay Siliconix New Product www.vishay.com 2 Document Number: 72222 S-32039—Rev. B, 13-Oct-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain CurrentNO TAG ID(on) VDS w 5 V, VGS = 10 V 30 A Drain-Source On-State ResistanceNO TAG rDS(on) VGS = 10 V, ID = 25 A 0.0024 0.003 W Drain-Source On-State ResistanceNO TAG rDS(on) VGS = 4.5 V, ID = 19 A 0.0032 0.004 W Forward TransconductanceNO TAG gfs VDS = 15 V, ID = 25 A 110 S Diode Forward VoltageNO TAG VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 V DynamicNO TAG Total Gate Charge Qg 45 70 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 20 A 20 nC Gate-Drain Charge Qgd 16 Gate Resistance RG 1.1 W Turn-On Delay Time td(on) 27 40 Rise Time tr VDD = 15 V, RL = 15 W 21 35 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 107 160 ns Fall Time tf 43 65 Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 45 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 0 2468 10 VGS = 10 thru 4 V 25_C TC = 125_C -55_C 3 V Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) |
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