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2SD1047 Datenblatt(PDF) 1 Page - STMicroelectronics |
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2SD1047 Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 10 page April 2011 Doc ID 018729 Rev 1 1/10 10 2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram TO-3P 1 2 3 Table 1. Device summary Order code Marking Package Packaging 2SD1047 2SD1047 TO-3P Tube www.st.com |
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Ähnliche Beschreibung - 2SD1047 |
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