Datenblatt-Suchmaschine für elektronische Bauteile |
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STGP15H60DF Datenblatt(PDF) 4 Page - STMicroelectronics |
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STGP15H60DF Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 23 page Electrical characteristics STGB15H60DF, STGF15H60DF, STGP15H60DF 4/23 DocID025113 Rev 2 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 15 A 1.6 2.0 V VGE = 15 V, IC = 15 A TJ = 125 °C 1.7 VGE = 15 V, IC = 15 A TJ = 175 °C 1.8 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5.0 6.0 7.0 V ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 -1952 - pF Coes Output capacitance - 78 - pF Cres Reverse transfer capacitance -45 - pF Qg Total gate charge VCC = 480 V, IC = 15 A, VGE = 15 V -81 - nC Qge Gate-emitter charge - 8 - nC Qgc Gate-collector charge - 42 - nC |
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Ähnliche Beschreibung - STGP15H60DF |
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