STGP19NC60S datasheet(4/15 Pages) STMICROELECTRONICS

Teilenummer	STGP19NC60S

Bauteilbeschribung	20 A, 600 V fast IGBT

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB19NC60S, STGP19NC60S

4/15

Doc ID 13688 Rev 5

2

Electrical characteristics

(Tj = 25°C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC= 1mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 12A

VGE= 15V, IC=12A,Tj =125°C

1.55

1.35

1.9

V

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

4.2

6.2

V

ICES

Collector cut-off current

(VGE = 0)

VCE= 600 V

VCE= 600 V, Tj =125°C

150

1

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

±100

nA

gfs

Forward transconductance

VCE = 15V, IC= 12A

10

S

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

-

1190

135

28.5

-

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 480V, IC = 12A,

VGE = 15V,

Figure 18

-

54.5

8.7

25.8

-

nC

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