STGW20V60DF datasheet(9/23 Pages) STMICROELECTRONICS

Teilenummer	STGW20V60DF

Bauteilbeschribung	Low thermal resistance

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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9 / 23 page

DocID024360 Rev 3

9/23

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF

Electrical characteristics

Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance

AM17188v1

1

10

100

010

20

30

40

ts (ns)

Ic (A)

V

CC = 400V, VGE = 15V,

Tj =175

°C, Rg = 10 Ω

t doff

t don

t r

t f

AM17189v1

t f

1

10

100

0

10203040

ts (ns)

Rg (Ω)

VCC= 400V, VGE= 15V,

Tj=175 °C Ic = 40 A

t doff

t don

t r

Figure 22. Reverse recovery current vs. diode

current slope

Figure 23. Reverse recovery time vs. diode

current slope

Figure 24. Reverse recovery charge vs. diode

current slope

Figure 25. Reverse recovery energy vs. diode

current slope

AM17190v1

0

10

20

30

40

50

0

500

1000

1500

2000

2500

Irm (A)

di/dt (A/μs)

V

r = 400V, IF = 20 A

25°C

175 °C

AM17191v1

0

20

40

60

80

100

120

140

160

180

0

500

1000

1500

2000

2500

trr (μs)

di/dt (A/μs)

V

r = 400V, IF = 20 A

25 ºC

175 ºC

AM17192v1

0

200

400

600

800

1000

1200

1400

0

500

1000

1500

2000

2500

Qrr (nC)

di/dt (A/μs)

V

r = 400V, IF = 40 A

25°C

175°C

AM17193v1

0

100

200

300

400

500

600

700

800

0

500

1000

1500

2000

2500

Err (μJ)

di/dt (A/μs)

V

r = 400 V, IF = 20 A

175°C

25°C

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