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STGF35HF60W Datenblatt(PDF) 4 Page - STMicroelectronics |
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STGF35HF60W Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGF35HF60W, STGW35HF60W, STGFW35HF60W 4/17 Doc ID 17490 Rev 3 2 Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC= 20 A 2 2.5 V VGE = 15V, IC = 20 A,TJ= 125 °C 1.65 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TJ = 125 °C 250 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V ± 100 nA Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 2400 235 50 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 400 V, IC = 20 A, VGE = 15 V, (see Figure 18) - 140 13 52 - nC nC nC |
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