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STGFW20H65FB Datenblatt(PDF) 9 Page - STMicroelectronics

Teilenummer STGFW20H65FB
Bauteilbeschribung  Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGFW20H65FB Datenblatt(HTML) 9 Page - STMicroelectronics

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STGFW20H65FB, STGW20H65FB, STGWT20H65FB
Electrical characteristics
Figure 20. Switching times vs collector current
Figure 21. Switching times vs gate resistance
t(ns)
100
10
1
0
IC(A)
20
30
40
TJ= 175°C, VGE= 15V
Rg= 10Ω, VCC= 400V
tf
tdoff
tdon
tr
10
GIPG260820141417FSR
t(ns)
100
10
0
Rg(Ω)
10
20
TJ= 175°C, VGE= 15V
IC= 20A, VCC= 400V
tf
tdoff
30
tdon
tr
40
10
GIPG260820141422FSR
Figure 22. Capacitance variations
Figure 23. Gate charge vs. gate-emitter voltage
C(pF)
1000
100
10
0.1
VCE(V)
110
10000
Cies
Coes
Cres
GIPG260820141434FSR
VGE
(V)
4
2
0
0
Qg(nC)
40
80
120
6
8
10
12
14
VCC= 520V, IC= 20A
IG= 1mA
16
GIPG260820141445FSR


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