STGW30H65FB datasheet(9/20 Pages) STMICROELECTRONICS

Teilenummer	STGW30H65FB

Bauteilbeschribung	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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9 / 20 page

DocID025849 Rev 5

9/20

STGFW30H65FB, STGW30H65FB, STGWT30H65FB

Electrical characteristics

Figure 20. Switching times vs collector current

Figure 21. Switching times vs gate resistance

t

IC(A)

(ns)

0

10

20

1

30

tf

TJ= 175°C, VGE= 15V,

RG= 10Ω, VCC= 400V

tdoff

10

tr

tdon

40

50

100

GIPG100720141533FSR

t

10

RG(Ω)

(ns)

010

20

100

30

tf

TJ= 175°C, VGE= 15V,

IC= 30A, VCC= 400V

40

tdon

tdoff

tr

GIPG100720141549FSR

Figure 22. Capacitance variations

Figure 23. VCE(sat) vs. collector current

C

10

VCE(V)

(pF)

0.1

1

10

Cies

100

1000

Coes

Cres

100

GIPG090720141358FSR

VCE(sat)

1.6

1.4

1.2

0

30

IC(A)

(V)

45

60

2.2

2.0

1.8

VGE= 15V

TJ= 175°C

TJ= 25°C

TJ= -40°C

2.4

GIPG280120141446FSR

Figure 24. Gate charge vs. gate-emitter voltage

VGE

(V)

4

2

0

Qg(nC)

40

80

120

160

6

8

10

12

14

VCC= 520V, IC= 30A

IG= 1mA

16

GIPG280120141455FSR

Ähnliche Beschreibung - STGW30H65FB

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Ähnliche Beschreibung - STGW30H65FB

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