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STGFW30V60F Datenblatt(PDF) 6 Page - STMicroelectronics

Teilenummer STGFW30V60F
Bauteilbeschribung  Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGFW30V60F Datenblatt(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGFW30V60F, STGW30V60F, STGWT30V60F
6/19
DocID025005 Rev 4
2.1
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P
Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
Figure 4. Power dissipation vs. case
temperature for TO-3PF
Figure 5. Collector current vs. case temperature
for TO-3PF
Figure 6. Output characteristics (TJ=25°C)
Figure 7. Output characteristics (TJ=175°C)
Ptot
150
100
50
0
0
50
100
(W)
25
75
125
200
150 175 TC(°C)
250
AM17409v1
IC
30
20
10
0
0
50
TC(°C)
100
(A)
25
75
125
40
50
150 175
60
VGE =15 V, TJ = 175 °C
AM17410v1
30
Ptot
20
10
0
050
100
(W)
25
75
125
40
50
60
AM17409v2
150
TC(°C)
IC
15
10
5
0
0
50
100
(A)
TC(°C)
25
75
125
20
25
150
AM17410v2
IC
80
60
20
0
0
1
3
(A)
2
4
100
VCE(V)
40
9V
11V
13V
VGE=15V
120
AM17411v1
IC
80
60
20
0
0
1
3
(A)
2
4
100
120
VCE(V)
40
9V
11V
13V
7V
VGE=15V
AM17412v1


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