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STGW80V60DF Datenblatt(PDF) 9 Page - STMicroelectronics

Teilenummer STGW80V60DF
Bauteilbeschribung  Low thermal resistance
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STGW80V60DF Datenblatt(HTML) 9 Page - STMicroelectronics

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DocID024362 Rev 2
9/18
STGW80V60DF, STGWT80V60DF
Electrical characteristics
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching loss vs collector current
Figure 17. Switching loss vs gate resistance
Figure 18. Switching loss vs temperature
Figure 19. Switching loss vs collector-emitter
voltage
C
100
VCE(V)
(pF)
0.1
1
10
Cies
1000
10000
Coes
Cres
GIPD041120131358FSR
VGE
8
0
Qg(nC)
(V)
0
100
IC= 80A
VCC= 480V
4
200
12
300
16
400
500
GIPD041120131406FSR
E
0
IC(A)
(μJ)
20
40
60
2000
80
100
4000
EON
6000
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
120
EOFF
140
8000
10000
GIPD041120131413FSR
E
0
RG(Ω)
(μJ)
010
20
2000
4000
6000
30
40
8000
EOFF
VCC = 400 V, VGE = 15 V,
IC = 80 A, TJ = 175 °C
EON
GIPD041120131419FSR
E
1000
TJ(°C)
(μJ)
050
2000
3000
4000
100
150
EOFF
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 80A
EON
GIPD041120131424FSR
E
0
VCE(V)
(μJ)
150
350
2000
4000
6000
EOFF
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 80A
EON
250
450
GIPD041120131428FSR


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