Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4148WT Datenblatt(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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1N4148WT Datenblatt(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification High Speed Switching Diode 1N4148WT H019 www.gmicroelec.com Rev.A 2 Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 75 IR=1.0μA 0.715 V IF=1mA 0.855 V IF=10mA 1.0 V IF=50mA Forward voltage VF 1.25 V IF=150mA 1.0 μA VR=75V Reverse current IR 25 nA VR=20V Diode capacitance Cd 2.0 pF VR=0,f=1.0MHz Reverse recovery time trr 4.0 ns IF=IR=10mA,Irr=0.1* IR, RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
Ähnliche Teilenummer - 1N4148WT |
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Ähnliche Beschreibung - 1N4148WT |
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