STP160N3LL datasheet(5/13 Pages) STMICROELECTRONICS

Teilenummer	STP160N3LL

Bauteilbeschribung	Very low on-resistance

Download	13 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

5 / 13 page

STP160N3LL

Electrical characteristics

DocID025073 Rev 3

5/13

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on voltage

VGS = 0 V, ISD = 60 A

-

1.1

V

trr

Reverse recovery time

ISD = 120 A, di/dt = 100 A/µs,

VDD = 24 V (see Figure 15: "Test

circuit for inductive load switching

and diode recovery times")

-

28.6

ns

Qrr

Reverse recovery

charge

-

22.8

nC

IRRM

Reverse recovery

current

-

1.6

A

Notes:

(1)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Ähnliche Beschreibung - STP160N3LL

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	STL6P3LLH6	578Kb / 15P	Very low on-resistance November 2014 Rev 3
	STP110N8F6	557Kb / 13P	Very low on-resistance December 2014 Rev 2
	STR1P2UH7	613Kb / 12P	Very low on-resistance June 2015 Rev 3
	STR2P3LLH6	547Kb / 12P	Very low on-resistance November 2014 Rev 2
	STS9P3LLH6	602Kb / 13P	Very low on-resistance March 2016 Rev 2
	STT3P2UH7	563Kb / 13P	Very low on-resistance September 2016 Rev 3
	STH260N6F6-6	817Kb / 13P	Very low on-resistance March 2014 Rev 2
	STD15P6F6AG	643Kb / 15P	Very low on-resistance
	STT7P2UH7	488Kb / 13P	Very low on-resistance October 2014 Rev 3
	STH175N4F6-2AG	594Kb / 18P	Very low on-resistance February 2015 Rev 1

More results

STP160N3LL Datenblatt(PDF) 5 Page - STMicroelectronics

STP160N3LL Datenblatt(HTML) 5 Page - STMicroelectronics

Ähnliche Teilenummer - STP160N3LL

Ähnliche Beschreibung - STP160N3LL

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datenblatt Download

Link URL