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TLP222G-2 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer TLP222G-2
Bauteilbeschribung  Cordless Telephones PBX Modems
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP222G-2 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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TLP222G,TLP222G-2
2002-04-19
2
Maximum Rating (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta >= 25°C)
DIF/°C
-0.5
mA/°C
Peak forward current
(100
ms pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
LED
Junction temperature
Tj
125
°C
Off-state output terminal voltage
VOFF
350
V
TLP222G
One channel
operation
On-state
current
TLP222G-2 Two channel
operations
(Note 1)
ION
120
mA
TLP222G
One channel
operation
On-state
current
derating
(Ta >= 25°C)
TLP222G-2 Two channel
operations
(Note 1)
DION/°C
-1.2
mA/°C
Detector
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55 to 125
°C
Operating temperature range
Topr
-40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min, R.H. <= 60%)
(Note 2)
BVS
2500
Vrms
Note 1: Two channels operating simultaneously.
Note 2: Device considered a two-terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VDD
¾
¾
280
V
Forward current
IF
5
7.5
25
mA
On-state current
ION
¾
¾
100
mA
Operating temperature
Topr
-20
¾
65
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
¾
¾
10
mA
LED
Capacitance
CT
V
= 0, f = 1 MHz
¾
30
¾
pF
Off-state current
IOFF
VOFF = 350 V
¾
¾
1
mA
Detector
Capacitance
COFF
V
= 0, f = 1 MHz
¾
30
¾
pF


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