Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

STY105NM50N Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STY105NM50N
Bauteilbeschribung  N-channel 500 V, 0.019typ., 110 A, MDmesh??II Power MOSFET in a Max247 package
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY105NM50N Datenblatt(HTML) 4 Page - STMicroelectronics

  STY105NM50N Datasheet HTML 1Page - STMicroelectronics STY105NM50N Datasheet HTML 2Page - STMicroelectronics STY105NM50N Datasheet HTML 3Page - STMicroelectronics STY105NM50N Datasheet HTML 4Page - STMicroelectronics STY105NM50N Datasheet HTML 5Page - STMicroelectronics STY105NM50N Datasheet HTML 6Page - STMicroelectronics STY105NM50N Datasheet HTML 7Page - STMicroelectronics STY105NM50N Datasheet HTML 8Page - STMicroelectronics STY105NM50N Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 13 page
background image
Electrical characteristics
STY105NM50N
4/13
Doc ID 022226 Rev 3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 500 V
VDS = 500 V, TC=125 °C
10
150
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 52 A
0.019
0.022
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
9600
-
pF
Coss
Output capacitance
-
500
-
pF
Crss
Reverse transfer
capacitance
-22
-
pF
Coss(eq)
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent output
capacitance
VDS = 0 to 400 V VGS = 0
-
1675
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.3
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 110 A,
VGS = 10 V
(see Figure 15)
-
326
-
nC
Qgs
Gate-source charge
-
40
-
nC
Qgd
Gate-drain charge
-
180
-
nC


Ähnliche Teilenummer - STY105NM50N

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
STMicroelectronics
STY100NM60N STMICROELECTRONICS-STY100NM60N Datasheet
815Kb / 13P
   Low input capacitance and gate charge
November 2012 Rev 2
STY100NS20FD STMICROELECTRONICS-STY100NS20FD Datasheet
260Kb / 8P
   N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY??Power MOSFET
STY100NS20FD STMICROELECTRONICS-STY100NS20FD Datasheet
232Kb / 12P
   N-channel 200V - 0.022廓 - 100A - Max247 MESH OVERLAY??Power MOSFET
STY100NS20FD STMICROELECTRONICS-STY100NS20FD_06 Datasheet
232Kb / 12P
   N-channel 200V - 0.022廓 - 100A - Max247 MESH OVERLAY??Power MOSFET
More results

Ähnliche Beschreibung - STY105NM50N

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
STMicroelectronics
STY112N65M5 STMICROELECTRONICS-STY112N65M5 Datasheet
856Kb / 12P
   N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package
STY139N65M5 STMICROELECTRONICS-STY139N65M5 Datasheet
971Kb / 13P
   N-channel 650 V, 0.014 廓 typ., 130 A, MDmesh??V Power MOSFET in Max247 package
STY145N65M5 STMICROELECTRONICS-STY145N65M5 Datasheet
788Kb / 13P
   N-channel 650 V, 0.012 廓 typ., 138 A, MDmesh??V Power MOSFET in Max247 package
STFI20NM65N STMICROELECTRONICS-STFI20NM65N Datasheet
783Kb / 12P
   N-channel 650 V, 15 A, 0.250 廓 typ., MDmesh??II Power MOSFET in a I짼PAKFP package
December 2013 Rev 1
STW60NM50N STMICROELECTRONICS-STW60NM50N Datasheet
757Kb / 13P
   N-channel 500 V, 0.035 廓, 68 A, MDmesh??II Power MOSFET in a TO-247 package
April 2013 Rev 2
STW48NM60N STMICROELECTRONICS-STW48NM60N Datasheet
717Kb / 13P
   N-channel 600 V, 0.055 廓 typ., 44 A MDmesh??II Power MOSFET in a TO-247 package
STW62NM60N STMICROELECTRONICS-STW62NM60N Datasheet
793Kb / 13P
   N-channel 600 V, 0.04 廓 typ., 65 A, MDmesh??II Power MOSFET in a TO-247 package
December 2012 Rev 3
STL23NM50N STMICROELECTRONICS-STL23NM50N Datasheet
659Kb / 13P
   N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package
STD13NM50N STMICROELECTRONICS-STD13NM50N Datasheet
665Kb / 18P
   N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package
DS12790 - Rev 1 - October 2018
STY50N105DK5 STMICROELECTRONICS-STY50N105DK5 Datasheet
716Kb / 12P
   N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh™ DK5 Power MOSFET in a Max247 package
December 2016
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com