Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7020-A10 Datenblatt(PDF) 5 Page - Silicon Laboratories |
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SI7020-A10 Datenblatt(HTML) 5 Page - Silicon Laboratories |
5 / 34 page Si7020-A10 Rev. 1.1 5 Conversion Time1 tCONV 12-bit RH — 10 12 ms 11-bit RH — 5.8 7 10-bit RH — 3.7 4.5 8-bit RH — 2.6 3.1 14-bit temperature — 7 10.8 13-bit temperature — 4 6.2 12-bit temperature — 2.4 3.8 11-bit temperature — 1.5 2.4 Powerup Time tPU From VDD ≥ 1.9 V to ready for a conversion, 25 °C —18 25 ms From VDD ≥ 1.9 V to ready for a con- version, full temperature range —— 80 After issuing a software reset command —5 15 Table 2. General Specifications (Continued) 1.9 < VDD < 3.6 V; TA = –40 to 85 °C (G grade) or –40 to 125 °C (I/Y grade); default conversion time unless otherwise noted. Parameter Symbol Test Condition Min Typ Max Unit Notes: 1. Initiating a RH measurement will also automatically initiate a temperature measurement. The total conversion time will be tCONV(RH) + tCONV(T). 2. No conversion or I2C transaction in progress. Typical values measured at 25 °C. 3. Occurs once during powerup. Duration is <5 msec. 4. Occurs during I2C commands for Reset, Read/Write User Registers, Read EID, and Read Firmware Version. Duration is <100 µs when I2C clock speed is >100 kHz (>200 kHz for 2-byte commands). 5. IDD after a user register write. Initiating any other subsequent I2C transaction on the same bus (such as the user register read, starting an RH measurement, or traffic directed at other I2C devices) will transition the device to standby mode. 6. Additional current consumption when HTRE bit enabled. See section “5.5. Heater” for more information |
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