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5V41236PGGI8 Datenblatt(PDF) 9 Page - Integrated Device Technology

Teilenummer 5V41236PGGI8
Bauteilbeschribung  4 OUTPUT PCIE GEN1/2/3 SYNTHESIZER
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Hersteller  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

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IDT5V41236
4 OUTPUT PCIE GEN1/2/3 SYNTHESIZER
IDT® 4 OUTPUT PCIE GEN1/2/3 SYNTHESIZER
9
IDT5V41236
APRIL 4, 2017
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the IDT5V41236. These ratings are stress ratings
only. Functional operation of the device at these or any other conditions above those indicated in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods can affect product
reliability. Electrical parameters are guaranteed only over the recommended operating temperature range.
DC Electrical Characteristics
Unless stated otherwise, VDD = 3.3V ±5%, Ambient Temperature -40 to +85
C
1. Single edge is monotonic when transitioning through region.
2. Inputs with pull-ups/-downs are not included.
Item
Rating
Supply Voltage, VDD, VDDA
5.5V
All Inputs and Outputs
-0.5V to VDD+0.5V
Ambient Operating Temperature (commercial)
0 to +70
C
Ambient Operating Temperature (industrial)
-40 to +85
C
Storage Temperature
-65 to +150
C
Junction Temperature
125
C
Soldering Temperature
260
C
ESD Protection (Input)
2000V min. (HBM)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Supply Voltage
V
3.135
3.3
3.465
Input High Voltage1
VIH
S0, S1, S2, OE, X1, PD#
2.2
VDD +0.3
V
Input Low Voltage1
VIL
S0, S1, S2, OE, X1, PD#
VSS-0.3
0.8
V
Input Leakage Current2
IIL
0 < Vin < VDD
-5
5
A
Operating Supply Current
@100 MHz
IDD
RS=33RP=50, CL=2 pF
113
125
mA
IDDOE
OE =Low
42
50
mA
Input Capacitance
CIN
Input pin capacitance
7
pF
Output Capacitance
COUT
Output pin capacitance
6
pF
X1, X2 Capacitance
CINX
5pF
Pin Inductance
LPIN
5nH
Output Impedance
Zo
CLK outputs
3.0
k
Pull-up Resistance
RPUP
S0, S1, OE, S2, PD#
100
k


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