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IRL830T Datenblatt(PDF) 1 Page - List of Unclassifed Manufacturers

Teilenummer IRL830T
Bauteilbeschribung  POWER MOSFET
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Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
POWER MOSFET
IRF830
Advance Information
Ordering Information
Device
Package
Temp.
IRL830T
TO-220
0 to 150
°C
IRL830S
TO-263 ( D
2 )
0 to 150
°C
Absolute Maximum Rating
Parameter
Max
Unit
ID@ TC =25
°°°°C
Continuous Drain Current, VGS @10V
4.5
ID@ TC =100
°°°°C
Continuous Drain Current, VGS @10V
2.9
IDM
Pulsed Drain Current (1)
18
A
PD @ TC =25
°°°°C
Power Dissipation
74
W
Linear Derating Factor
0.59
Linear Derating Factor ( PCB Mount, D
2 ) (1)
0.025
W/
°°°°C
VGS
Gate-to- Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy (2)
280
mJ
IAR
Avalanche Current (1)
4.5
A
EAR
Repetitive Avalanche Energy (1)
7.4
mJ
dv/dt
Peak Diode Recovery dv/dt (3)
3.5
V/ns
TJ, TSTG
Junction & Storage Temperature Range
−55 to +150
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
°°°°C
Thermal Resistance
Parameter
Min
Typ
Max
Units
RθθθθJC
Junction-to Case
-
-
1.7
RθθθθCS
Case-to-Sink, Flat, Greased Surface ( TO-220)
-
0.50
RθθθθJA
Junction-to Ambient ( PCB Mount, D
2 )
40
RθθθθJA
Junction-to Ambient
-
-
62
°°°°C/W
Description
The Bay Linear MOSFET’s provide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2 surface
mount power package with a power dissipation up to 2 Watts
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
VDSS = 500V
RDS (ON) = 1.5 Ω
ID = 4.5A
Bay Linear
Bay Linear
Bay Linear
Bay Linear
Linear Excellence


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