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SI4880DY Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI4880DY Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si4880DY Vishay Siliconix New Product Document Number: 70857 S-60711—Rev. A, 01-Feb-99 www.vishay.com S FaxBack 408-970-5600 2-1 N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.0085 @ VGS = 10 V "13 30 0.014 @ VGS = 4.5 V "10 SD S D SD G D SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET DD G S D D S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "25 V Continuous Drain Current (TJ = 150_C)a, b TA = 25_C ID "13 A Continuous Drain Current (TJ = 150_C)a, b TA = 70_C ID "10 A Pulsed Drain Current (10 ms Pulse Width) IDM "50 A Continuous Source Current (Diode Conduction)a, b IS 2.3 Maximum Power Dissipationa, b TA = 25_C PD 2.5 W Maximum Power Dissipationa, b TA = 70_C PD 1.6 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)a t v 10 sec RthJA 50 _C/W Maximum Junction-to-Ambient (MOSFET)a Steady State RthJA 70 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. |
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