2SK3067

2002-06-05

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3067

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

l Low drain−source ON resistance

l High forward transfer admittance

l Low leakage current

l Enhancement−mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

600

V

600

V

Gate−source voltage

±30

V

DC

(Note 1)

2

A

Pulse (t = 1 ms)

(Note 1)

5

A

Drain current

Pulse (t = 100 µs)

(Note 1)

8

A

Drain power dissipation

25

W

Single pulse avalanche energy

(Note 2)

93

mJ

Avalanche current

2

A

Repetitive avalanche energy (Note 3)

2.5

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Characteristics

Symbol

Max

Unit

Thermal reverse, channel to case

5.0

°C / W

Thermal reverse, channel to ambient

62.5

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

—

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)