2SK3417 datasheet(1/6 Pages) TOSHIBA

Teilenummer	2SK3417

Bauteilbeschribung	Switching Regulator Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SK3417

2002-08-12

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3417

Switching Regulator Applications

·

Reverse-recovery time: trr = 60 ns (typ.)

·

Built-in high-speed flywheel diode

·

Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

·

High forward transfer admittance: ïYfsï = 4.0 S (typ.)

·

Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)

·

Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

500

V

Drain-gate voltage (RGS = 20 kW)

VDGR

500

V

Gate-source voltage

VGSS

±30

V

DC

(Note 1)

ID

5

Drain current

Pulse (Note 1)

IDP

20

A

Drain power dissipation (Tc

= 25°C)

PD

50

W

Single pulse avalanche energy

(Note 2)

EAR

180

mJ

Avalanche current

IAR

5

A

Repetitive avalanche energy (Note 3)

EAR

5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.5

°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

83.3

°C/W

Note 1: Please use devise on condition that the channel temperature is

below 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 W,

IAR = 5 A

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

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