Datenblatt-Suchmaschine für elektronische Bauteile |
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DM74S473AV Datenblatt(PDF) 4 Page - National Semiconductor (TI) |
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DM74S473AV Datenblatt(HTML) 4 Page - National Semiconductor (TI) |
4 / 6 page AC Electrical Characteristics with Standard Load and Operating Conditions COMMERCIAL TEMP RANGE (0 Cto a70 C) Symbol JEDEC Parameter DM74S473 DM74S473A Units Symbol Min Typ Max Min Typ Max TAA TAVQV Address Access Time 40 60 25 45 ns TEA TEVQV Enable Access Time 15 30 15 30 ns TER TEXQX Enable Recovery Time 15 30 15 30 ns TZX TEVQX Output Enable Time 15 30 15 30 ns TXZ TEXQZ Output Disable Time 15 30 15 30 ns Functional Description TESTABILITY The Schottky PROM die includes extra rows and columns of fusable links for testing the programmability of each chip These test fuses are placed at the worst-case chip locations to provide the highest possible confidence in the program- ming tests in the final product A ROM pattern is also per- manently fixed in the additional circuitry and coded to pro- vide a parity check of input address levels These and other test circuits are used to test for correct operation of the row and column-select circuits and functionality of input and en- able gates All test circuits are available at both wafer and assembled device levels to allow 100% functional and para- metric testing at every stage of the test flow RELIABILITY As with all National products the Ti-W PROMs are subject- ed to an on-going reliability evaluation by the Reliability As- surance Department These evaluations employ accelerat- ed life tests including dynamic high-temperature operating life temperature-humidity life temperature cycling and ther- mal shock To date nearly 74 million Schottky Ti-W PROM device hours have been logged with samples in Epoxy B molded DIP (N-package) PLCC (V-package) and CERIP (J- package) Device performance in all package configurations is excellent TITANIUM-TUNGSTEN FUSES National’s Programmable Read-Only Memories (PROMs) feature titanuim-tungsten (Ti-W) fuse links designed to pro- gram efficiently with only 105V applied The high perform- ance and reliability of these PROMs are the result of fabrica- tion by a Schottky bipolar process of which the titanium- tungsten metallization is an integral part and the use of an on-chip programming circuit A major advantage of the titanium-tungsten fuse technology is the low programming voltage of the fuse links At 105V this virtually eliminates the need for guard-ring devices and wide spacings required for other fuse technologies Care is taken however to minimize voltage drops across the die and to reduce parasitics The device is designed to ensure that worst-case fuse operating current is low enough for reliable long-term operation The Darlington programming circuit is liberally designed to insure adequate power density for blowing the fuse links The complete circuit design is optimized to provide high performance over the entire oper- ating ranges of VCC and temperature 4 |
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Ähnliche Beschreibung - DM74S473AV |
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