Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7474 Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7474 Datenblatt(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 9/3/01 IRF7474 HEXFET® Power MOSFET Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.6 A IDM Pulsed Drain Current 36 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 SO-8 T op V iew 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS RDS(on) max ID 100V 63 m Ω Ω Ω Ω Ω@VGS = 10V 4.5A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterruptible Power Supply Benefits Applications l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current PD- 94097 |
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Ähnliche Beschreibung - IRF7474 |
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