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TS884IPT Datenblatt(PDF) 9 Page - STMicroelectronics

Teilenummer TS884IPT
Bauteilbeschribung  Rail-to-rail 1.1 V dual and quad nanopower comparators
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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TS884IPT Datenblatt(HTML) 9 Page - STMicroelectronics

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DocID024119 Rev 3
9/26
TS882, TS884
Electrical characteristics
26
TF
Fall time (90% to 10%)
CL = 30 pF, RL = 1 MΩ
150
ns
TON
Power-up time
1.1
1.7
ms
1.
All values over the temperature range are guaranteed through correlation and simulation. No production test is performed
at the temperature range limits.
2.
The offset is defined as the average value of positive and negative trip points (input voltage differences requested to
change the output state in each direction).
3.
The hysteresis is a built-in feature of the TS882 device. It is defined as the voltage difference between the trip points.
4.
Maximum values include unavoidable inaccuracies of the industrial tests.
Table 6. VCC = +5 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified)
(1) (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit


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