Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1534B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE1534B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 6 page ACE1534B N-Channel Power MOSFET VER 1.1 2 Ordering information ACE1534B XX + H Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=250µA 30 V Zero gate voltage drain current IDSS VDS=27V, VGS=0V 1 µA Gate threshold voltage VGS(th) VGS=VDS, IDS=250µA 1.0 1.6 2.5 V Gate leakage current IGSS VGS=±20V, VDS=0V ±100 µA Drain-source on-state resistance RDS(ON) VGS=10V, ID=30A 1.2 1.6 mΩ VGS=4.5V, ID=15A 1.8 2.4 Forward Trans conductance gFS VDS =10V, ID= 15A 30 S Diode forward voltage VSD ISD=1A, VGS=0V 0.65 1 V Maximum body-diode continuous current IS 130 A Switching Total Gate Charge Qg VGS=10V, VDS=15V, ID=10A 65.2 120 nC Gate-Source Charge Qgs 16 30 Gate-Drain Charge Qgd 21 40 Turn-on Delay Time td (on ) VDD=15V, ID=1A, VGS=10V,RG=3.3 Ω 28 56 ns Turn-on Rise Time tr 45 90 Turn-off Delay Time td(off) 105 200 Turn-off Fall Time tf 40 80 Dynamic Input Capacitance Ciss VGS=0V, VDS=25V, f=1.0MHz 7720 pF Output Capacitance Coss 945 Reverse Transfer Capacitance Crss 435 PN: DFN5*6-EP Pb - free Halogen - free |
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