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ACE1534B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD.

Teilenummer ACE1534B
Bauteilbeschribung  N-Channel Power MOSFET
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

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ACE1534B
N-Channel Power MOSFET
VER 1.1
1
Description
ACE1534B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS= 30V , ID=130A
RDS(ON)@ VGS = 10V , TYP= 1.2
mΩ
RDS(ON)@ VGS = 4.5V , TYP= 1.8
mΩ
Absolute Maximum Ratings@TA=25℃ unless otherwise noted
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)*AC
TA=25℃
ID
130
A
TA=100℃
82
Drain Current (Pulsed)*B
IDM
520
A
Power Dissipation
TA=25℃
PD
166
W
Operating temperature / Storage temperature
TJ/TSTG
-55~150
A: The value of RθJAis measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP


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