Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1820B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1820B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE1820B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ACE1820B uses advanced trench technology and design to provide excellent RDS(ON) gate charge. It can be used in a wide variety of applications Features VDS=200V, ID=18A RDS(ON)1@VGS=10V, MAX 170mΩ RDS(ON)1@VGS=4.5V, MAX 180mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID 18 A TA=100℃ 11.7 Single Pulse Avalanche Energy3 EAS 15 mJ Drain Current (Pulsed)*B IDM 40 A Power Dissipation TA=25℃ PD 83 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type TO-220 |
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