Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2420B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2420B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 6 page ACE2420B N-Channel Enhancement Mode Power MOSFET VER 1.1 2 Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA 200 V Zero Gate Voltage Drain Current IDSS1 VDS = 200V, VGS = 0V 1 μA Gate Threshold Voltage VGS(TH) VGS = VDS , IDS= 250μA 1 1.5 2.5 V Gate Leakage Current IGSS VGS= ±20V , VDS=0V ±100 nA Drain-Source On-state Resistance RDS(on) VGS = 10V , ID= 15A 62 80 mΩ Forward Trans Conductance gFS VDS= 10V , ID= 15A 30 S Diode Forward Voltage VSD ISD= 15A , VGS= 0V 1.2 V Diode Forward Current IS 24 A Switching Total Gate Charge Qg VDS= 100V, ID= 15A, VGS= 10V 60 nC Gate-Source Charge Qgs 19 nC Gate-Drain Charge Qgd 17 nC Turn-on Delay Time td( on ) VDD=100V,ID= 15A, VGS= 10V,RG= 2.5Ω 10 ns Turn-on Rise Time tr 18 ns Turn-off Delay Time td( off ) 22 ns Turn-off Fall Time tf 5 ns Dynamic Input Capacitance Ciss VDS=25V,VGS= 0V, f= 1.0MHz 4200 pF Output Capacitance Coss 163 pF Reverse Transfer Capacitance Crss 75 pF |
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