Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2420B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2420B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE2420B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ACE2420B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS=200V , ID= 24A RDS(ON) @VGS =10V , TYP 62mΩ Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID 24 A TA=100℃ 17 Drain Current (Pulsed)*B IDM 100 A Power Dissipation TA=25℃ PD 150 A Operating Temperature/Storage Temperature TJ/ TSTG -55~150 OC /W A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type T0-220 Ordering information ACE2420BXX + H ZM: TO-220 Pb - free Halogen - free |
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