Datenblatt-Suchmaschine für elektronische Bauteile |
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SM8LZ47 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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SM8LZ47 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM8LZ47 2001-07-13 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8LZ47 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 800V l R.M.S ON−State Current : IT(RMS) = 8A l High Commutating (dv / dt) : (dv / dt) c = 10V / µs (Min.) l Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive PeakOff−State Voltage VDRM 800 V R.M.S On−State Current (Full Sine Waveform) IT (RMS) 8 A 70 (50Hz) Peak One Cycle Surge On-State Current (Non−Repetitive) ITSM 80 (60Hz) A I 2 t Limit Value I 2 t 24.5 A 2 s Critical Rate of Rise of On−State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Gate Voltage VFGM 10 V Peak Gate Current IGM 2 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Isolation Voltage (AC, t = 1min.) VISOL 1500 V Note: di / dt test condition VDRM = 400V, ITM≤12A, tgw≥10µs, tgr≤250ns, igp = IGT×2.0 JEDEC ― JEITA ― TOSHIBA 13−10H1A Weight: 1.7g Unit: mm |
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