SI1404DH datasheet(2/3 Pages) VISHAY

Teilenummer	SI1404DH

Bauteilbeschribung	N-Channel 25-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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SPICE Device Model Si1404DH

Vishay Siliconix

www.vishay.com

Document Number: 73120

2

27-Aug-04

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1

V

On-State Drain Current

a

ID(on)

VDS = 5 V, VGS = 4.5 V

11

A

VGS = 4.5 V, ID = 1.57 A

0.28

Drain-Source On-State Resistance

a

rDS(on)

VGS = 2.5 V, ID = 1.39 A

0.33

0.36

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 0.75 A

2.3

1.5

S

Diode Forward Voltage

a

VSD

IS = 1.23 A, VGS = 0 V

0.76

0.85

V

Dynamic

b

Total Gate Charge

Qg

1

1.3

Gate-Source Charge

Qgs

0.31

Gate-Drain Charge

Qgd

VDS = 15 V, VGS = 4.5 V, ID = 1.57 A

0.49

nC

Turn-On Delay Time

td(on)

12

11

Rise Time

tr

15

18

Turn-Off Delay Time

td(off)

19

17

Fall Time

tf

VDD = 15 V, RL = 20 Ω

ID ≅ 0.75 A, VGEN = 4.5 V, RG = 6 Ω

21

11

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

Ähnliche Beschreibung - SI1404DH

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