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SI1404DH Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI1404DH Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 3 page SPICE Device Model Si1404DH Vishay Siliconix www.vishay.com Document Number: 73120 2 27-Aug-04 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 V On-State Drain Current a ID(on) VDS = 5 V, VGS = 4.5 V 11 A VGS = 4.5 V, ID = 1.57 A 0.28 0.28 Drain-Source On-State Resistance a rDS(on) VGS = 2.5 V, ID = 1.39 A 0.33 0.36 Ω Forward Transconductance a gfs VDS = 15 V, ID = 0.75 A 2.3 1.5 S Diode Forward Voltage a VSD IS = 1.23 A, VGS = 0 V 0.76 0.85 V Dynamic b Total Gate Charge Qg 1 1.3 Gate-Source Charge Qgs 0.31 0.31 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 1.57 A 0.49 0.49 nC Turn-On Delay Time td(on) 12 11 Rise Time tr 15 18 Turn-Off Delay Time td(off) 19 17 Fall Time tf VDD = 15 V, RL = 20 Ω ID ≅ 0.75 A, VGEN = 4.5 V, RG = 6 Ω 21 11 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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