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LM139A-MIL

SLCS161 – JUNE 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential voltages, are with respect to network ground.

(3)

Differential voltages are at xIN+ with respect to xIN–.

(4)

be incorrect. Normal operation resumes when input is removed.

(5)

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

36

V

±36

V

Input voltage range (either input)

–0.3

36

V

–50

mA

Output voltage

36

V

Output current

20

mA

Unlimited

Operating virtual-junction temperature

150

°C

Case temperature for 60 s

FK package

260

°C

Lead temperature 1.6 mm (1/16 in) from case for 60 s

J package

300

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±500

V

±750

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage

2

30

V

Junction temperature

–55

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

LM139A-MIL

UNIT

D (SOIC) N (PDIP)

J (CDIP)

W (CFP)

FK (LCCC)

Junction-to-ambient thermal resistance

98.8

79

89.5

156.2

82.5

°C/W

Junction-to-case (top) thermal resistance

64.3

73.4

46.1

86.7

60.7

°C/W

Junction-to-board thermal resistance

59.7

58.7

78.7

154.6

59.4

°C/W

Junction-to-top characterization parameter

25.7

48.3

3

56.5

53

°C/W

Junction-to-board characterization parameter

59.3

58.5

71.8

133.5

58.4

°C/W

Junction-to-case (bottom) thermal resistance

—

—

24.2

14.3

9.7

°C/W