Datenblatt-Suchmaschine für elektronische Bauteile |
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BD332 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD332 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor BD332 DESCRIPTION · High DC Current Gain · Complement to type BD331 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IBM Base Current-Peak -0.15 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃ /W |
Ähnliche Teilenummer - BD332 |
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Ähnliche Beschreibung - BD332 |
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