KM718V089 datasheet(9/20 Pages) SAMSUNG

Teilenummer	KM718V089

Bauteilbeschribung	512Kx36 & 1Mx18 Synchronous SRAM

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Hersteller	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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512Kx36 & 1Mx18 Synchronous SRAM

- 9 -

Rev 1.0

December 1999

KM718V089

KM736V989

PASS-THROUGH TRUTH TABLE

Note : 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.

PREVIOUS CYCLE

PRESENT CYCLE

NEXT CYCLE

OPERATION

WRITE

OPERATION

CS1

WRITE

OE

Write Cycle, All bytes

Address=An-1, Data=Dn-1

All L

Initiate Read Cycle

Address=An

Data=Qn-1 for all bytes

L

H

L

Read Cycle

Data=Qn

Write Cycle, All bytes

Address=An-1, Data=Dn-1

All L

No new cycle

Data=Qn-1 for all bytes

H

L

No carryover from

previous cycle

Write Cycle, All bytes

Address=An-1, Data=Dn-1

All L

No new cycle

Data=High-Z

H

No carryover from

previous cycle

Write Cycle, One byte

Address=An-1, Data=Dn-1

One L

Initiate Read Cycle

Address=An

Data=Qn-1 for one byte

L

H

L

Read Cycle

Data=Qn

Write Cycle, One byte

Address=An-1, Data=Dn-1

One L

No new cycle

Data=Qn-1 for one byte

H

L

No carryover from

previous cycle

CAPACITANCE*(TA=25

°C, f=1MHz)

*Note : Sampled not 100% tested.

PARAMETER

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Input Capacitance

CIN

VIN=0V

-

7

pF

Output Capacitance

COUT

VOUT=0V

-

9

pF

OPERATING CONDITIONS at 3.3V I/O(0

°C ≤ TA ≤ 70°C)

PARAMETER

SYMBOL

MIN

Typ.

MAX

UNIT

Supply Voltage

VDD

3.135

3.3

3.465

V

VDDQ

3.135

3.3

3.465

V

Ground

VSS

0

V

OPERATING CONDITIONS at 2.5V I/O(0

°C ≤ TA ≤ 70°C)

PARAMETER

SYMBOL

MIN

Typ.

MAX

UNIT

Supply Voltage

VDD

3.135

3.3

3.465

V

VDDQ

2.375

2.5

2.9

V

Ground

VSS

0

V

ABSOLUTE MAXIMUM RATINGS*

*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

PARAMETER

SYMBOL

RATING

UNIT

Voltage on VDD Supply Relative to VSS

VDD

-0.3 to 4.6

V

Voltage on VDDQ Supply Relative to VSS

VDDQ

VDD

V

Voltage on Input Pin Relative to VSS

VIN

-0.3 to 4.6

V

Voltage on I/O Pin Relative to VSS

VIO

-0.3 to VDDQ+0.5

V

Power Dissipation

PD

1.6

W

Storage Temperature

TSTG

-65 to 150

°C

Operating Temperature

TOPR

0 to 70

°C

Storage Temperature Range Under Bias

TBIAS

-10 to 85

°C

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