2SC4081W datasheet(2/6 Pages) FOSHAN

Teilenummer	2SC4081W

Bauteilbeschribung	Silicon NPN transistor in a SOT-323 Plastic Package

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Hersteller	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC4081W

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

7.0

V

Collector Current - Continuous

IC

150

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=50μA

IE=0

60

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=1.0mA

IB=0

50

V

Emitter to Base Breakdown Voltage

VEBO

IE=50μA

IC=0

7.0

V

Collector Cut-Off Current

ICBO

VCB=60V

IE=0

0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=7.0V

IC=0

0.1

μA

DC Current Gain

hFE

VCE=6.0V

IC=1.0mA

120

560

Collector-Emitter Saturation Voltage VCE(sat) IC=50mA

IB=5.0mA

0.4

V

Transition Frequency

fT

VCE=12V

IE=-2.0mA

f=100MHz

180

MHz

Output Capacitance

Cob

VCB=12V

IE=0

f=1.0MHz

2.0

3.5

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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