2SD999 datasheet(2/6 Pages) FOSHAN

Teilenummer	2SD999

Bauteilbeschribung	Silicon NPN transistor in a SOT-89 Plastic Package

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Hersteller	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SD999

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

25

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current-Continuous

IC

1.0

A

Collector Current -Continuous(Pluse)

ICP

1.5

A

Collector Power Dissipation

PC

500

mW

Collector Power Dissipation*

*PC

2.0

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

*mounted on ceramic substrate(16cmm2×0.7mm)

*装于 16cmm2×0.7mm 的陶瓷上。

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=30V

IE=0

0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=1.0V

IC=100mA

90

200

400

hFE(2)

VCE=1.0V

IC=1.0A

50

140

Collector to Emitter Saturation

Voltage

VCE(sat) IC=1.0A

IB=100mA

0.21

0.4

V

Base to Emitter Saturation Voltage

VBE(sat) IC=1.0A

IB=100mA

1.0

1.2

V

Base to Emitter Voltage

VBE

VCE=6.0V

IC=10mA

600

630

700

mV

Transition Frequency

fT

VCE=6.0V

IC=10mA

130

MHz

Collector Output Capacitance

Cob

VCB=6.0V

IE=0

f=1.0MHz

22

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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