Datenblatt-Suchmaschine für elektronische Bauteile |
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SDD100N14B Datenblatt(PDF) 2 Page - Sirectifier Semiconductors |
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SDD100N14B Datenblatt(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page SDD100NXXB Diode-Diode Modules ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit V VF IF=300A; TVJ=25oC 1.5 VTO For power-loss calculations only 0.8 V rT 2.3 m IR TVJ=TVJM; VR=VRRM 15 mA TVJ=TVJM per diode; DC current per module RthJC 0.35 0.175 K/W per diode; DC current per module RthJK 0.55 0.275 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uC QS TVJ=125oC; IF=50A; -di/dt=3A/us 170 IRM 45 A FEATURES * International standard package * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs compliant * Copper base plate P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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