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SDD120N12B Datenblatt(PDF) 4 Page - Sirectifier Semiconductors

Teilenummer SDD120N12B
Bauteilbeschribung  Diode-Diode Modules
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Hersteller  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

SDD120N12B Datenblatt(HTML) 4 Page - Sirectifier Semiconductors

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Fig .14 Transient thermal impedance vs. time
1/2 SDD120B
.
K/W
Zth(j-s)
Zth(j-c)
Zth
0.4
0.6
0.2
0.3
0.5
0.001 t
0.01
0.1
1
10
s 100
0.1
0
0
Fig .15 Forward characteristics
IF
VF
A
0.5
1
1.5
v
2
1/2 SDD120B
.
typ.
max.
Tvj=25 C
O
_
Tvj=125 C
O
100
200
300
400
Fig .16 Surge overload current vs. time
IFSM(25 C) =2500A
O
IFSM(125 C)=2000A
O
1 VRRM
.
0.5 VRRM
.
0 VRRM
.
1
t
10
100
ms 1000
0.4
0.6
0.8
1
1.2
1.4
1.6
IF(OV)
IFSM
2
1/2 SDD120B
.
Diode-Diode Modules
SDD1 0NXXB
P4
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com


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