Datenblatt-Suchmaschine für elektronische Bauteile |
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CSD18511KTT Datenblatt(PDF) 4 Page - Texas Instruments |
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CSD18511KTT Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 11 page VDS - Drain-to-Source Voltage (V) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 25 50 75 100 125 150 175 200 D002 VGS = 4.5 V VGS = 8 V VGS = 10 V VGS - Gate-to-Source Voltage (V) 1 1.5 2 2.5 3 3.5 4 4.5 5 0 25 50 75 100 125 150 175 200 D003 TC = 125°C TC = 25°C TC = -55°C 4 CSD18511KTT SLPS684 – JULY 2017 www.ti.com Product Folder Links: CSD18511KTT Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance Figure 2. Saturation Characteristics VDS = 5 V Figure 3. Transfer Characteristics |
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