KTA1725 datasheet(2/6 Pages) FOSHAN

Teilenummer	KTA1725

Bauteilbeschribung	Silicon PNP transistor in a TO-220F Plastic Package.

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Hersteller	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

KTA1725

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-80

V

Collector to Emitter Voltage

VCEO

-80

V

Emitter to Base Voltage

VEBO

-6.0

V

Collector Current - Continuous

IC

-6.0

A

Base Current

IB

-3.0

A

Collector Power Dissipation

Pc(Tc=25 )

℃

30

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=-25mA

IB=0

-80

V

Collector Cut-Off Current

ICBO

VCB=-80V

IE=0

-10

μA

Emitter Cut-Off Current

IEBO

VEB=-6.0V

IC=0

-10

μA

DC Current Gain

hFE

VCE=-4.0V

IC=-2.0A

55

160

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-2.0A

IB=-0.2A

-0.5

V

Transition Frequency

fT

VCE=-12V

IC=-0.5A

20

MHz

Collector output capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

150

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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