2SC1318 datasheet(2/6 Pages) FOSHAN

Teilenummer	2SC1318

Bauteilbeschribung	Silicon NPN transistor in a TO-92 Plastic Package

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Hersteller	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC1318

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

7.0

V

Collector Current - Continuous

IC

500

mA

Collector Current – Continuous(Pulse)

ICP

1.0

A

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=10μA

IE=0

60

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

50

V

Emitter to Base Breakdown

Voltage

VEBO

IE=10μA

IC=0

7.0

V

Collector Cut-Off Current

ICBO

VCB=20V

IE=0

0.1

μA

DC Current Gain

hFE(1)

VCE=10V

IC=150mA

85

160

340

hFE(2)

VCE=10V

IC=500mA

40

90

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=300mA

IB=30mA

0.35

0.6

V

Base to Emitter Saturation

Voltage

VBE(sat)

IC=300mA

IB=30mA

1.1

1.5

V

Transition Frequency

fT

VCE=10V

IC=50mA

200

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

6.0

15

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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