BF421 datasheet(2/6 Pages) FOSHAN

Teilenummer	BF421

Bauteilbeschribung	Silicon PNP transistor in a TO-92 Plastic Package

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Hersteller	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

BF421

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-300

V

Collector to Emitter Voltage

VCEO

-300

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-50

mA

Peak Collector Current

ICM

-100

mA

Collector Power Dissipation

PC

830

mW

Peak Base Current

IBM

-50

mA

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-off Current

ICBO

VCB=-200V

IE=0

-0.01

μA

C Emitter Cut-off Current

IEBO

VEB=-5.0V

IC=0

-0.05

μA

DC Current Gain

hFE

VCE=-20V

IC=-25mA

50

Collector to Emitter Saturation

Voltage

VCE(sat) IC=-30mA

IB=-5.0mA

-0.6

V

Base to Emitter Voltage

VBE

VCE=-20V

IC=-25mA

-0.75

V

Transition Frequency

fT

VCE=-10V

IC=-10mA

60

MHz

Reverse Transfer Capacitance

Cre

VCB=-30V

IE=0

f=1.0MHz

1.6

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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