2SC3415 datasheet(1/3 Pages) JIANGSU

Teilenummer	2SC3415

Bauteilbeschribung	TO-92 Plastic-Encapsulate Transistors

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Hersteller	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SC3415

TRANSISTOR (NPN)

FEATURES

High Breakdown Voltage

Low Collector Output Capacitance

Ideal for Chroma Circuit

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 50µA,IE=0

300

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=100µA,IB=0

300

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50µA,IC=0

5

V

Collector cut-off current

ICBO

VCB=200V,IE=0

0.5

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.5

μA

DC current gain

hFE

VCE=10V, IC=10mA

39

180

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=5mA

2

V

Base-emitter saturation voltage

VBE(sat)

IC=50mA,IB=5mA

1.2

V

Collector output capacitance

Cob

VCB=30V,IE=0, f=1MHz

3

pF

Transition frequency

fT

VCE=30V,IC=10mA

50

MHz

CLASSIFICATION OF hFE

RANK

M

N

P

RANGE

39-82

56-120

82-180

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

0.1

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

C,Dec,2015

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