BCX70J datasheet(1/3 Pages) JIANGSU

Teilenummer	BCX70J

Bauteilbeschribung	SOT-23 Plastic-Encapsulate Transistors

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Hersteller	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encap sulate Transistors

BCX70J,BCX70K TRANSISTOR (NPN)

FEATURES

Low current

Low voltage

MARKING : BCX70J：AJ, BCX70K:AK

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

45

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

200

mA

PC

Collector Power Dissipation

250

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10μA,IE=0

45

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=2mA,IB=0

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1μA,IC=0

5

V

Collector cut-off current

ICES

VCE=45V,VBE=0

20

nA

hFE1

VCE=5V,IC=10μA

30

hFE2

VCE=5V,IC=2mA

250

460

DC current gain

BCX70J

hFE3

VCE=1V,IC=50mA

90

hFE1

VCE=5V,IC=10μA

100

hFE2

VCE=5V,IC=2mA

380

630

DC current gain

BCX70K

hFE3

VCE=1V,IC=50mA

100

VCE(sat)1

IC= 10mA IB= 0.25 mA

0.05

0.35

V

Collector-emitter saturation voltage

VCE(sat)2

IC= 50mA IB=1.25 mA

0.1

0.55

V

VBE(sat)1

IC= 10mA IB=-0.25 mA

0.6

0.85

V

Base -emitter saturation voltage

VBE(sat)2

IC= 50mA IB= 1.25 mA

0.7

1.05

V

Base-emitter voltage

VBE

VCE=5V,IC=2mA

0.55

0.75

V

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

1.7

pF

Noise Figure

NF

VCE=5V,IC=200μA,

f=1

kHz,BW=200Hz,RS=2kΩ

6

dB

Gain-Bandwidth Product

fT

VCE= 5 V, IC=10mA,f =100 MHz

100

250

MHz

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

C,Oct,2014

JC T

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