Datenblatt-Suchmaschine für elektronische Bauteile |
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STD123S Datenblatt(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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STD123S Datenblatt(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors STD123S TRANSISTOR (NPN) FEATURES Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Marking:123 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR) CBO IC=50μA, IE=0 20 V Collector-emitter breakdown voltage V (BR) CEO IC =1mA, IB=0 15 V Emitter-base breakdown voltage V (BR) EBO IE= 50μA, IC=0 6.5 V Collector cut-off current ICBO VCB= 20 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 6V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC= 100mA 150 Collector-emitter saturation voltage VCE (sat) IC=500mA, IB= 50mA 0.3 V Transition frequency fT VCE=5V, IC=50mA 260 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 5 pF On resistance RON f=1KHz,IB=1mA, VIN=0.3V 0.6 Ω SOT-23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com C,Oct,2014 JC T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current 1 A PC Collector Power Dissipation 350 mW RΘJA Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ |
Ähnliche Teilenummer - STD123S |
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Ähnliche Beschreibung - STD123S |
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