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TSHG6410 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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TSHG6410 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 5 page TSHG6410 www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Aug-11 3 Document Number: 81870 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 2 - Pulse Forward Current vs. Pulse Duration Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Radiant Intensity vs. Forward Current Fig. 5 - Radiant Power vs. Forward Current Fig. 6 - Relative Radiant Power vs. Wavelength Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 100 1000 0.01 0.1 1 10 100 tp - Pulse Duration (ms) 16031 t p/T = 0.01 0.05 0.2 0.5 0.1 0.02 T amb < 50 °C 18873 1000 100 10 1 VF - Forward Voltage (V) 02 4 t p = 100 µs t p/T = 0.001 13 1 10 100 1000 1 10 100 1000 t P = 0.1 ms 21308 I F - Forward Current (mA) 0.1 1 10 100 1000 110 100 1000 16971 IF - Forward Current (mA) 800 850 λ- Wavelength (nm) 900 16972 0 0.25 0.5 0.75 1.0 1.25 21355 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 0 0.2 0.4 |
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