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BCP55 Datenblatt(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Teilenummer BCP55
Bauteilbeschribung  SOT-223 Plastic-Encapsulate Transistors
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Hersteller  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

BCP55 Datenblatt(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP54,55,56
TRANSISTOR (NPN)
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51 ... BCP53 (PNP)
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
BCP54
BCP55
BCP56
Unit
VCBO
Collector-Base Voltage
45
60
100
V
VCEO
Collector-Emitter Voltage
45
60
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
1.5
W
RθJA
Thermal Resistance Junction to Ambient
83.3
/W
Tstg
Storage Temperature Range
-65
~+150
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
BCP54
BCP55
BCP56
V(BR)CBO
IC= 0.1mA,IE=0
45
60
100
V
Collector-emitter breakdown voltage
BCP54
BCP55
BCP56
V(BR)CEO
IC= 10mA,IB=0
45
60
80
V
Base-emitter breakdown voltage
V(BR)EBO
IE= 10μA,IC=0
5
V
Collector cut-off current
ICBO
VCB= 30 V, IE=0
100
nA
hFE(1)
VCE= 2V, IC=5mA
25
hFE(2)
VCE= 2V, IC=150m A
63
250
DC current gain
hFE(3)
VCE= 2V, IC=500m A
25
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
0.5
V
Base-emitter voltage
VBE
VCE=2V, IC=500m A
1
V
Transition frequency
fT
VCE=10V,IC=50mA,f=100MHz
100
MHz
CLASSIFICATION OF hFE(2)
Rank
BCP54-10, BCP55-10, BCP56-10
BCP54-16, BCP55-16, BCP56-16
Range
63-160
100-250
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
www.cj-elec.com
1
Marking
BCP54-10, BCP55-10, BCP56-10
BCP54-16, BCP55-16, BCP56-16
G,Jan,2017


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